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| NTTD4401F FETKYtPower MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. Features http://onsemi.com MOSFET PRODUCT SUMMARY V(BR)DSS -20 V 100 mW @ -2.7 V -2.7 A RDS(on) Typ 70 mW @ -4.5 V ID Max -3.3 A * Low VF and Low Leakage Schottky Diode * Lower Component Placement and Inventory Costs along with Board * * * * * Space Savings Logic Level Gate Drive - Can be Driven by Logic ICs Buck Converter Synchronous Rectification Low Voltage Motor Control Load Management in Battery Packs, Chargers, Cell Phones, and other Portable Products Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissi ation Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissi ation Dissipation (Note 2) Pulsed Drain Current Steady State t = 10 ms Steady State TA = 25C TA = 100C TA = 25C 25 C TA = 25C TA = 100C TA = 25C 25 C PD IDM TJ, TSTG EAS PD ID Symbol VDSS VGS ID Value -20 -10 3.3 2.1 1.42 2.4 1.5 0.78 10 -55 to 150 150 W A C mJ W A Unit V V A SCHOTTKY DIODE SUMMARY VR Max 20 V IF Max 2.0 A VF Max 600 mV @ IF = 2.0 A A Applications S G MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) D P-Channel MOSFET 8 1 C SCHOTTKY DIODE Micro8 CASE 846A MARKING DIAGRAM & PIN CONNECTIONS ANODE ANODE SOURCE GATE 1 2 3 4 (Top View) Y = Year WW = Work Week BG = Device Code YWW BG 8 7 6 5 CATHODE CATHODE DRAIN DRAIN Operating Junction and Storage Temperature Single Pulse Drain-to-Source Avalanche Energy Starting TA = 25C (t v 10 s) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C ORDERING INFORMATION Device NTTD4401FR2 Package Micro8 Shipping 4000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). (c) Semiconductor Components Industries, LLC, 2004 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 August, 2004 - Rev. 3 Publication Order Number: NTTD4401F/D NTTD4401F SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Peak Repetitive Reverse Voltage Average Forward Current (Rated VR, TA = 100C) Peak Repetitive Forward Current (Note 3) Non-Repetitive Peak Surge Current (Note 4) Symbol V IO IFRM IFSM Value 20 1.0 2.0 20 Unit V A A A THERMAL RESISTANCE RATINGS FET Rating Junction-to-Ambient - Steady State (Note 5) Junction-to-Ambient - Steady State (Note 6) Symbol RJA RJA 88 160 Schottky Max 135 250 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current (Note 7) V(BR)DSS IDSS VGS = 0 V VGS = 0 V, VDS = -16 V VGS = 0 V, TJ = 125C, VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) () VGS = VDS, ID = -250 mA - VGS = -4.5 V, ID = -3.3 A VGS = -2.5 V, ID = -1.2 A Forward Transconductance gFS VDS = -10 V, ID = -2.7 A -0.5 - - - - - 2.5 70 100 4.2 -1.5 - 90 150 - S V mV/C mW IGSS VDS = 0 V, VGS = 10 V -20 - - - - - - - - -1.0 -25 100 nA V mA Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller'' Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. 4. 5. 6. 7. VSD tRR ta tb QRR - VGS = 0 V dIS/dt = 100 A/ V, A/ms, IS = -3.3 A VGS = 0 V, IS = -2.0 A - - - - - -0.88 37 16 21 0.025 -1.0 50 - - 0.05 nC V ns td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -3.3 A, RG = 6.0 W - - - - 11 35 33 29 20 65 60 55 ns CISS COSS CRSS QG(TOT) QGS QGD VGS = -4.5 V VDS = -16 V, 4 5 V, 16 V ID = -3.3 A VGS = 0 V, f = 1.0 MHz, V 1 0 MH VDS = -16 V - - - - - - 550 200 50 10 1.5 5.0 750 300 175 18 3.0 10 nC pF Rated VR, square wave, 20 kHz, TA = 105C. Surge applied at rated load conditions, half-wave, single phase, 60 Hz. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). Body diode leakage current. http://onsemi.com 2 NTTD4401F SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage Reverse Leakage Current Symbol BV IR Test Condition IR = 1.0 mA VR = 20 V TA = 25C TA = 125C TA = 25C TA = 125C TA = 25C TA = 125C Min 20 - - - - - - - Typ - - - - - - - 10,000 Max - 0.05 10 0.5 0.39 0.6 0.53 - V/ms V Unit V mA Forward Voltage VF IF = 1 0 A 1.0 IF = 2 0 A 2.0 Voltage Rate of Change dV/dt VR = 20 V http://onsemi.com 3 NTTD4401F TYPICAL ELECTRICAL CHARACTERISTICS 4 VGS = -2.1 V -ID, DRAIN CURRENT (AMPS) 3 VGS = -10 V VGS = -4.5 V VGS = -2.5 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 4 5 VDS > = -10 V VGS = -1.9 V 3 2 VGS = -1.7 V 1 VGS = -1.5 V 0 0 2 4 6 8 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 TJ = 25C 1 0 1 TJ = 100C 1.5 TJ = 55C 2 2.5 3 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.2 TJ = 25C 0.15 0.12 TJ = 25C 0.1 VGS = -2.7 V 0.08 VGS = -4.5 V 0.06 0.1 0.05 0 2 4 6 8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.04 1 1.5 2 2.5 3 3.5 4 4.5 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -3.3 A VGS = -4.5 V 1000 VGS = 0 V -IDSS, LEAKAGE (nA) 100 TJ = 100C 10 TJ = 25C 1 TJ = 125C 1.4 1.2 1 0.8 0.1 0.6 -50 0.01 -25 0 25 75 50 100 125 TJ, JUNCTION TEMPERATURE (C) 150 0 4 8 12 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTTD4401F TYPICAL ELECTRICAL CHARACTERISTICS 1500 VDS = 0 V C, CAPACITANCE (pF) 1200 Ciss VGS = 0 V TJ = 25C 5 QT 4 20 18 16 14 3 Q1 2 ID = -3.3 A TJ = 25C Q2 VGS 12 10 8 6 1 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) VDS 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 900 Crss 600 Ciss 300 Coss Crss 0 10 5 0 -VGS -VDS 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 VDD = -10 V ID = -1.2 A VGS = -2.7 V t, TIME (ns) 100 td (off) tr tf t, TIME (ns) td (on) 10 100 tr td (off) td (on) 10 1.0 10 RG, GATE RESISTANCE (W) 100 tf VDD = -10 V ID = -3.3 A VGS = -4.5 V 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 2 -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C Figure 10. Resistive Switching Time Variation vs. Gate Resistance 1.6 di/dt IS 1.2 trr ta tb TIME 0.8 tp 0.4 0 0.4 IS 0.25 IS 0.5 0.6 0.7 0.8 0.9 1 Figure 12. Diode Reverse Recovery Waveform -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 11. Diode Forward Voltage vs. Current http://onsemi.com 5 NTTD4401F 1 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 Normalized to Rja at Steady State (1 inch pad) 0.0125 0.0563 0.110 0.273 0.113 0.436 0.1 0.1 0.05 0.02 0.01 0.021 F 0.137 F 1.15 F 2.93 F 152 F 261 F Single Pulse 0.01 1E-03 1E-02 1E-01 1E+00 t, TIME (s) 1E+03 1E+02 1E+03 Figure 13. FET Thermal Response TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 10 TJ = 125C TJ = 125C 1.0 85C 25C 1.0 85C 25C -40 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 14. Typical Forward Voltage Figure 15. Maximum Forward Voltage http://onsemi.com 6 NTTD4401F TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) 1E-2 IR, REVERSE CURRENT (AMPS) TJ = 125C 1E-3 85C 1E-4 1E-1 TJ = 125C 1E-2 1E-3 1E-5 25C 1E-6 1E-7 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 1E-4 25C 1E-5 1E-6 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 16. Typical Reverse Current Figure 17. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) 1000 TYPICAL CAPACITANCE AT 0 V = 170 pF C, CAPACITANCE (pF) 1.6 dc 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p Ipk/Io = 5.0 FREQ = 20 kHz 100 10 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 18. Typical Capacitance Figure 19. Current Derating PFO , AVERAGE POWER DISSIPATION (WATTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE dc Figure 20. Forward Power Dissipation http://onsemi.com 7 NTTD4401F PACKAGE DIMENSIONS Micro8 CASE 846A-02 ISSUE F -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. M K -B- PIN 1 ID G D 8 PL 0.08 (0.003) TB S A S -T- PLANE 0.038 (0.0015) H SEATING C J L DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 --- 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 INCHES MIN MAX 0.114 0.122 0.114 0.122 --- 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 SOLDERING FOOTPRINT* 8X 1.04 0.041 0.38 0.015 8X 3.20 0.126 4.24 0.167 5.28 0.208 6X 0.65 0.0256 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. FETKY is a trademark of International Rectifier Corporation. Micro8 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTTD4401F/D |
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